SKM100GB12V |
Part Number | SKM100GB12V |
Manufacturer | Semikron International |
Description | SKM100GB12V Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 159 121 100 300 -20 ... 20 Tj ... |
Features |
• V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Tj = 175 °C IFRM IFSM Tj Module It(RMS) Tstg Visol Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Typical Applications* • AC inverter drives • UPS • Electronic welders Conditions IC = 100 A VGE = 15 V chiplevel Tj ... |
Document |
SKM100GB12V Data Sheet
PDF 259.88KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SKM100GB123D |
Semikron International |
IGBT | |
2 | SKM100GB124D |
Semikron International |
IGBT | |
3 | SKM100GB125DN |
Semikron International |
IGBT | |
4 | SKM100GB128D |
Semikron International |
IGBT | |
5 | SKM100GB128DN |
Semikron International |
IGBT |