www.DataSheet4U.com SKiiP 31 NAB 12 Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1) (Chopper see SKiiP 22 NAB 12) Values 1200 ± 20 45 / 30 90 / 60 38 / 26 76 / 52 1500 35 700 2400 – 40 . . . + 150 – 40 . . . + 125 2500 Units V V A A A A V A A A2s °C °C V Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Th.
25 (125) °C VCC = 600 V; VGE = ± 15 V td(on) IC = 15 A; Tj = 125 °C tr Rgon = Rgoff = 82 Ω td(off) tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh min.
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– typ. max. Units V 2,5(3,1) 3,0(3,7) ns 110 55 ns 110 55 ns 600 400 ns 90 45 mJ
– 7,8 nF
– 2,0 K/W 0,7
– V 2,5(3,1) 3,0(3,7) ns 110 55 ns 90 45 ns 600 400 ns 100 70 mJ
– 4,0 nF
– 1,0 K/W 1,4
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UL recognized file no. E63532
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specification of temperature sensor see part A common characteristics B 16
– 4
Options
• also available with powerful chopper. For characteristics please re.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SKIIP30NAB12T11 |
Semikron International |
3-phase bridge rectifier braking chopper 3-phase bridge inverter | |
2 | SKIIP30NAB06 |
Semikron International |
3-phase bridge rectifier braking chopper 3-phase bridge inverter | |
3 | SKIIP302GD061-359CTV |
Semikron International |
6-pack - integrated intelligent Power System | |
4 | SKIIP312GD120-302WT |
Semikron |
IGBT | |
5 | SKIIP312GD120302W |
Semikron |
IGBT | |
6 | SKIIP312GD120302W |
Semikron |
IGBT | |
7 | SKIIP312GDL120-404WT |
Semikron |
IGBT | |
8 | SKIIP312GDL120404W |
Semikron |
IGBT | |
9 | SKIIP313GD122-3DUL |
Semikron |
IGBT | |
10 | SKIIP31NAB06 |
Semikron |
IGBT | |
11 | SKIIP31NAB063T1 |
Semikron |
IGBT | |
12 | SKIIP31NAB12 |
Semikron |
IGBT |