SIZ730DT - Vishay

SIZ730DT N-Channel MOSFET

New Product N-Channel 30 V (D-S) MOSFETs SiZ730DT Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Channel-1 0.0093 at VGS = 10 V 30 0.0130 at VGS = 4.5 V Channel-2 0.0039 at VGS = 10 V 30 0.0053 at VGS = 4.5 V ID (A) 16a 16a 35a 35a Qg (Typ.) 7.7 nC 21.2 nC PowerPAIR® 6 x 3.7 Pin 1 G1 1 2 D1 3.73 mm D1 D1 3 G2 6 S2 5 S1/D2 Pin 7 S2 4 6 .

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• System Power - Notebook - Server
• POL
• Synchronous Buck Converter G1 D1 N-Channel 1 MOSFET G2 N-Channel 2 MOSFET S2 S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Channel-1 Channel-2 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Continuous Source Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanc.