SI7794DP - Vishay Siliconix

SI7794DP N-Channel MOSFET

www.DataSheet.co.kr New Product Si7794DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0034 at VGS = 10 V 0.0042 at VGS = 4.5 V ID (A)a 60 60 Qg (Typ.) 23 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • SkyFET™ Monolithic TrenchFET® Gen III Power MOSFET and Schottky Diode • 1.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• SkyFET™ Monolithic TrenchFET® Gen III Power MOSFET and Schottky Diode
• 100 % Rg Tested
• 100 % Avalanche Tested
• Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm
• Low Side in Vcore, System and Memory - Notebook PCs D G N-Channel MOSFET S Schottky Diode Bottom View Ordering Information: Si7794DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 7.