SI7703EDN - Vishay Siliconix

SI7703EDN Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

Si7703EDN New Product Vishay Siliconix Single P-Channel 20-V (D-S) MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) –20 FEATURES ID (A) –6.3 –5.3 –4.6 rDS(on) (W) 0.048 @ VGS = –4.5 V 0.068 @ VGS = –2.5 V 0.090 @ VGS = –1.8 V D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 4500 V D Ultra-Low Thermal Resistance, PowerPAKt Package with L.

Features

ID (A)
  –6.3
  –5.3
  –4.6 rDS(on) (W) 0.048 @ VGS =
  –4.5 V 0.068 @ VGS =
  –2.5 V 0.090 @ VGS =
  –1.8 V D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 4500 V D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D Charger Switching SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.48 V @ 0.5 A IF (A) 1.0 PowerPAKt 1212-8 S K 3.30 mm A 1 2 3.30 mm A S 3 4 K G G K 8 7 3 kW D 6 5 D D P-Channel MOSFET A Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET and Scho.