The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C value.
Foot 23.5742 33.2557 10.4624 2.7077 Foot 58.2147 m 11.8325 m 3.0211 m 289.3372 u Thermal Capacitance (Joules/°C) This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 74847 Revision: 11-Jul-07 www.vishay.com 1 Si6968BEDQ_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION www.DataSheet4U.com R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to RF1 RF2 RF3 RF4 Junction to CF.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI6968BEDQ |
Vishay Siliconix |
Dual N-Channel 2.5-V (G-S) MOSFET Common Drain | |
2 | SI6968ADQ |
Vishay Siliconix |
N-Channel 2.5-V (G-S) Battery Switch | |
3 | SI6968DQ |
Vishay Siliconix |
N-Channel 2.5-V (G-S) Battery Switch | |
4 | SI6963BDQ |
Vishay Siliconix |
Dual P-Channel 2.5-V (G-S) MOSFET | |
5 | SI6965DQ |
Vishay Siliconix |
P-Channel MOSFET | |
6 | SI6966EDQ |
Vishay Siliconix |
N-Channel 2.5-V (G-S) MOSFET | |
7 | SI6967DQ |
Vishay Siliconix |
Dual P-Channel MOSFET | |
8 | SI6969BDQ |
Vishay Siliconix |
Dual P-Channel 1.8-V (G-S) MOSFET | |
9 | SI6969DQ |
Vishay Siliconix |
Dual P-Channel 1.8-V (G-S) MOSFET | |
10 | SI6911DQ |
Vishay Siliconix |
Dual P-Channel MOSFET | |
11 | SI6913DQ |
Vishay Siliconix |
Dual P-Channel 12-V (D-S) MOSFET | |
12 | SI6924AEDQ |
Vishay Siliconix |
N-Channel MOSFET |