SI6968BEDQ - Vishay Siliconix

SI6968BEDQ Dual N-Channel 2.5-V (G-S) MOSFET Common Drain

Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 20 D TrenchFETr Power MOSFET D ESD Protected: 3000 V ID (A) 6.5 5.5 rDS(on) (W) 0.022 @ VGS = 4.5 V 0.030 @ VGS = 2.5 V D D www.DataSheet4U.com TSSOP-8 D S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6968BEDQ-T1 (with Tape and.

Features

PRODUCT SUMMARY VDS (V) 20 D TrenchFETr Power MOSFET D ESD Protected: 3000 V ID (A) 6.5 5.5 rDS(on) (W) 0.022 @ VGS = 4.5 V 0.030 @ VGS = 2.5 V D D www.DataSheet4U.com TSSOP-8 D S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6968BEDQ-T1 (with Tape and Reel) N-Channel S1 N-Channel S2 D 8 D 7 S2 6 S2 5 G2
*300 W G1 G2
*300 W
*Typical value by design ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipati.