SI4828DY - Vishay Siliconix

SI4828DY Dual N-Channel MOSFET

Si4828DY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) 0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V 0.0135 @ VGS = 10 V 0.0175 @ VGS = 4.5 V ID (A) 7.5 6.5 9.8 8.5 D1 D1 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET G1 G2 .

Features

on-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71181 S-00983—Rev. A, 15-May-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady-State Steady-State Channel-2 Typ 53 89 34 S b l Symbol RthJA RthJC Typ 55 89 36 Max 62.5 107 45 Max 62.5 107 42 U i Unit _C/W 1 Si4828DY Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Static Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = 20 V VDS = 24 V, VGS = 0 V Z G V l D i Current C Zero Gate Voltage Drain I.