SI3590DV - Vishay Siliconix

SI3590DV N- and P-Channel 30-V (D-S) MOSFET

Si3590DV Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 30 0.077 at VGS = 4.5 V 0.120 at VGS = 2.5 V P-Channel - 30 0.170 at VGS = - 4.5 V 0.300 at VGS = - 2.5 V ID (A) 3 2 -2 - 1.2 G1 3 mm S2 G2 TSOP-6 Top View 16 25 34 D1 S1 D2 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • T.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• Ultra Low RDS(on) N- and P-Channel for High Efficiency
• Optimized for High-Side/Low-Side
• Minimized Conduction Losses
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Portable Devices Including PDAs, Cellular Phones and Pagers D1 S2 G2 G1 2.85 mm Ordering Information: Si3590DV-T1-E3 (Lead (Pb)-free) Si3590DV-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel 10 s Steady State P-Cha.