SI3552DV - Vishay Siliconix

SI3552DV N- and P-Channel 30-V (D-S) MOSFET

Si3552DV Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 30 0.105 at VGS = 10 V 0.175 at VGS = 4.5 V P-Channel - 30 0.200 at VGS = - 10 V 0.360 at VGS = - 4.5 V ID (A) 2.5 2.0 - 1.8 - 1.2 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compl.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC G1 3 mm S2 G2 TSOP-6 Top View 16 25 34 D1 S1 D2 D1 S2 G2 G1 2.85 mm Ordering Information: Si3552DV -T1-E3 (Lead (Pb)-free) Si3552DV-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 - 30 Gate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C .