SI3475DV - Vishay Siliconix

SI3475DV P-Channel MOSFET

www.DataSheet.co.kr Si3475DV New Product Vishay Siliconix P-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 200 rDS(on) (Ω) 1.61 at VGS = - 10 V 1.65 at VGS = - 6 V ID (A)a - 0.95 - 0.93 Qg (Typ) 8 nC FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies RoHS COMPLIANT TSOP-6 Top.

Features

• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested APPLICATIONS
• Active Clamp Circuits in DC/DC Power Supplies RoHS COMPLIANT TSOP-6 Top View S D 1 6 D 3 mm D 2 5 D Marking Code AI XXX G G 3 4 S Lot Traceability and Date Code Part # Code 2.85 mm D P-Channel MOSFET Ordering Information: Si3475DV-T1-E3 (Lead (Pb)-free ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit - 200 ± 20.