N-Channel 100 V (D-S) MOSFET Si3474DV Vishay Siliconix MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.126 at VGS = 10 V 3.8 100 0.147 at VGS = 6 V 3.5 0.189 at VGS = 4.5 V 3.1 Qg (Typ.) 2.9 nC D 3 mm D TSOP-6 Top View 16 25 D D G3 4S 2.85 mm Ordering Information: Si3474DV-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Tren.
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• DC/DC Converters / Boost Converters
• Load Switch
• LED Backlighting in LCD TVs
• Power Management for Mobile
Computing
(1, 2, 5, 6) D
Marking Code
YY
BF XX
Lot Traceability and Date Code
Part # Code
G (3)
(4) S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA =.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | Si3474 |
Skyworks |
Ethernet Port PoE PSE Controllers | |
2 | Si3471 |
Skyworks |
Autonomous Single Ethernet Port IEEE 802.3bt PoE PSE | |
3 | SI3471CDV |
Vishay Siliconix |
P-Channel MOSFET | |
4 | Si3472 |
Skyworks |
Octal or Quad 2-pair 802.3bt Ethernet Port PoE PSE Controller | |
5 | Si3473 |
Skyworks |
Octal or Quad 2-pair 802.3bt Ethernet Port PoE PSE Controller | |
6 | SI3473CDV |
Vishay Siliconix |
P-Channel MOSFET | |
7 | Si3473DDV |
Vishay |
P-Channel 12 V (D-S) MOSFET | |
8 | SI3473DV |
Vishay Siliconix |
P-Channel 12-V (D-S) MOSFET | |
9 | SI3475DV |
Vishay Siliconix |
P-Channel MOSFET | |
10 | Si3476DV |
Vishay |
N-Channel MOSFET | |
11 | SI3477DV |
Vishay Siliconix |
P-Channel MOSFET | |
12 | SI3400 |
Silicon Laboratories |
FULLY-INTEGRATED 802.3-COMPLIANT PD INTERFACE AND SWITCHING REGULATOR |