SI3458DV - Vishay Siliconix

SI3458DV N-Channel 60-V (D-S) MOSFET

Si3458DV New Product Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) 0.10 @ VGS = 10 V 0.13 @ VGS = 4.5 V ID (A) "3.2 "2.8 (1, 2, 5, 6) D TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (4) S N-Channel MOSFET 2.85 mm ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source .

Features

/W 106 35 2-1 Si3458DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 48 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 150_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 3.2 A VGS = 4.5 V, ID = 2.8 A VDS = 4.5 V, ID = 3.2.