SI3451DV - Vishay Siliconix

SI3451DV P-Channel MOSFET

New Product Si3451DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) 0.115 at VGS = - 4.5 V 0.205 at VGS = - 2.5 V ID (A)a - 2.8 - 2.1 Qg (Typ) 3.2 nC FEATURES • TrenchFET® Power MOSFET • PWM Optimized • 100 % Rg tested RoHS COMPLIANT www.DataSheet4U.com TSOP-6 Top View 1 3 mm 6 (4) S 2 5 Marking Code AD XXX Lo.

Features

• TrenchFET® Power MOSFET
• PWM Optimized
• 100 % Rg tested RoHS COMPLIANT www.DataSheet4U.com TSOP-6 Top View 1 3 mm 6 (4) S 2 5 Marking Code AD XXX Lot Traceability and Date Code Part # Code (3) G 3 4 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3451DV-T1-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 20 ± 12 - 2.8 - 2.3 - 2.6b, c - 2.1b, c - 10 - 1.76 - 1.04b, c 2.1 1.3 1.25b, c 0.8b, c - 55 to 150 Uni.