SI3127DV - Vishay

SI3127DV MOSFET

www.vishay.com Si3127DV Vishay Siliconix P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -60 RDS(on) (Ω) MAX. 0.089 at VGS = -10 V 0.146 at VGS = -4.5 V ID (A) d -5.1 -4 TSOP-6 Single S 4 D 5 D 6 Qg (TYP.) 10.1 nC FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Material categorization: For definitions of compliance www.vishay.co.

Features

• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS
• Load switches
• DC/DC converter S 1 D Top View 2 D 3 G Marking Code: BL Ordering Information: Si3127DV-T1-GE3 (lead (Pb)-free and halogen-free) G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Avalanche Current Single-Pul.