SI2318 - HOTTECH

SI2318 N-Channel MOSFET

Plastic-Encapsulate Mosfets PRODUCT SUMMARY VDS (V) RDS(on) () 0.042 at VGS = 10 V 40 0.051 at VGS = 4.5 V ID (A)a 5.6 5.1 Qg (Typ.) 2.9 nC APPLICATIONS • DC/DC Converters • Load Switch • Portable and Consumer Applications SI2318 N-Channel MOSFET 1.Gate 2.Source 3.Drain G SOT-23 D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) .

Features

Drain) Steady State Notes: a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. Symbol RthJA RthJF Typical 80 40 Maximum 100 60 Unit V A W °C Unit °C/W GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P4 -P1 Plastic-Encapsulate Mosfets SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA VDS Temperature Coefficient VGS(th) Temperature Coefficient VDS/TJ VGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage .