SI2318 |
Part Number | SI2318 |
Manufacturer | HOTTECH |
Description | Plastic-Encapsulate Mosfets PRODUCT SUMMARY VDS (V) RDS(on) () 0.042 at VGS = 10 V 40 0.051 at VGS = 4.5 V ID (A)a 5.6 5.1 Qg (Typ.) 2.9 nC APPLICATIONS • DC/DC Converters • Load Switch • Port... |
Features |
Drain)
Steady State
Notes:
a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Symbol RthJA RthJF
Typical 80 40
Maximum 100 60
Unit V
A
W °C
Unit °C/W
GUANGDONG HOTTECH INDUSTRIAL CO., LTD
Page:P4 -P1
Plastic-Encapsulate Mosfets
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient VGS(th) Temperature Coefficient
VDS/TJ VGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
... |
Document |
SI2318 Data Sheet
PDF 758.38KB |
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