SI2303 - MCC

SI2303 P-Channel Enhancement Mode Field Effect Transistor

MCC Micro Commercial Components TM
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2303 Features • • • • • • • • • Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IDM VGS PD R©JA TJ TSTG Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gat.

Features

•
•
•
•
•
•
•
•
• Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IDM VGS PD R©JA TJ TSTG Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage Total Power Dissipation Thermal Resistance Junction to Ambientb Operating Junction Temperature Storage Temperature Rating -30 -3 -10 f20 0.25 500 -55 to +150 -55 to +150 Unit V A A V W к/W к к G Halogen free available upon request by adding suffix "-HF" -30V,-2.6A, RDS(ON)=130m¡@VGS= -10V -30V,-2.0A, RDS(ON)=180m¡@VGS= -4.5V High dense cell design for extremely low RDS(ON) Rugged and reliab.