SI1303EDL - Vishay Siliconix

SI1303EDL P-Channel 2.5-V (G-S) MOSFET

Si1303EDL New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.430 @ VGS = –4.5 V –20 20 0.480 @ VGS = –3.6 V 0.700 @ VGS = –2.5 V ID (A) "0.72 "0.68 "0.56 www.DataSheet4U.com SOT-323 SC-70 (3-LEADS) G 1 Marking Code 3 D LD XX YY Lot Traceability and Date Code S 2 Part # Code Top View ABSOLUTE MAXIMUM RATING.

Features

9400—Rev. A, 29-Nov-99 www.siliconix.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 315 360 285 Maximum 375 430 340 Unit _C/W 1 Si1303DL Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID =
  –250 mA VDS = 0 V, VGS = "4.5 V VDS =
  –20 V, VGS = 0 V VDS =
  –20 V, VGS = 0 V, TJ = 70_C VDS =
  –5 V, VGS =
  –4.5 V VGS =
  –4.5 V, ID =
  –1 A rDS(on) VGS =
  –3.6 V, ID =
  –0.7 A VGS =
  –.