SI1303DL - Vishay Siliconix

SI1303DL P-Channel MOSFET

P-Channel 2.5-V (G-S) MOSFET Si1303DL Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.430 at VGS = - 4.5 V - 20 0.480 at VGS = - 3.6 V 0.700 at VGS = - 2.5 V ID (A) - 0.72 - 0.68 - 0.56 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 2.5 V Rated • Compliant to RoHS Directive 2002/95/EC SOT-323 SC-7.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC SOT-323 SC-70 (3-LEADS) G1 3D S2 Top View Marking Code YY LA X Lot Traceability and Date Code Part # Code Ordering Information: Si1303DL-T1-E3 (Lead (Pb)-free) Si1303DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID IDM Continuous Diode Cur.