The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capaci.
the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 71771 S-50151Rev. B, 07-Feb-05 www.vishay.com 1 SPICE Device Model Si1039X Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current a Symbol Test Condition Simulated Data 0.82 25 0.136 0.187 0.255 3.5 −0.74 Measured Data Unit VGS(th) ID(on.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | Si1030 |
Silicon Laboratories |
10-Bit ADC MCU | |
2 | Si1031 |
Silicon Laboratories |
10-Bit ADC MCU | |
3 | SI1031R |
Vishay Siliconix |
P-Channel MOSFET | |
4 | Si1031X |
Vishay Siliconix |
P-Channel MOSFET | |
5 | Si1032 |
Silicon Laboratories |
10-Bit ADC MCU | |
6 | SI1032R |
Vishay Siliconix |
N-Channel MOSFET | |
7 | SI1032X |
Vishay |
N-Channel MOSFET | |
8 | Si1033 |
Silicon Laboratories |
10-Bit ADC MCU | |
9 | Si1034 |
Silicon Laboratories |
10-Bit ADC MCU | |
10 | Si1034CX |
Vishay |
Dual N-Channel MOSFET | |
11 | Si1035 |
Silicon Laboratories |
10-Bit ADC MCU | |
12 | SI1035X |
Vishay Siliconix |
MOSFET |