SI1035X - Vishay Siliconix

SI1035X MOSFET

Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 5 at VGS = 4.5 V N-Channel 20 7 at VGS = 2.5 V 9 at VGS = 1.8 V 10 at VGS = 1.5 V 8 at VGS = - 4.5 V P-Channel 12 at VGS = - 2.5 V - 20 15 at VGS = - 1.8 V 20 at VGS = - 1.5 V ID (mA) 200 175 150 50 - 150 - 125 - 100 - 30 S1 1 SC-89 6 .

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET: 1.5 V Rated
• Very Small Footprint
• High-Side Switching
• Low On-Resistance: N-Channel, 5  P-Channel, 8 
• Low Threshold: ± 0.9 V (typ.)
• Fast Switching Speed: 45 ns (typ.)
• 1.5 V Operation
• Gate-Source ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation APPLICATIONS
• Replace Digital Transistor, Level-Shifter
• Battery Operated Systems
• Power Supply Conve.