SGS30MA050D1 - STMicroelectronics

SGS30MA050D1 N-Channel MOSFET

SGS30MA050D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE Voss SGS30MA050D1 500 V Ros(on) 0.20 n 10 30 A • ISOLATED POWERMOS MODULE • HIGH POWER • FAST SWITCHING • EASY DRIVE • EASY TO PARALLEL INDUSTRIAL APPLICATIONS: • SWITCHING MODE POWER SUPPLIES • UNINTERRUPTIBLE POWER SUPPLIES N - channel enhancement mode POWER MOS field effect t.

Features

R VGS 10 10 10M Ptot Tstg Tj Visa Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 Kn) Gate-source voltage Drain current (cont.) at Tc =25°C Drain current (cont.) at Tc =100°C Drain current (pulsed) Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature Insulation withstand voltage (AC) June 1988 500 500 ±20 30 19 120 400 3.2 -65 to 150 150 2500 V V V A A A W W/oC °C °C V 1/5 409 SGS30MA050D1 THERMAL DATA Rthj _case Thermal resistance junction-case Rthc _h Thermal resistance case-heatsink max 0.31 °C/W max 0.20 °C/W ELECTRICAL.