SGS150MA01001 - STMicroelectronics

SGS150MA01001 N-Channel MOSFET

SGS150MA01001 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE Voss SGS150MA01001 100 V Ros(on) 0.0090 10 150 A • ISOLATED POWERMOS MODULE • HIGH POWER • FAST SWITCHING • EASY DRIVE • EASY TO PARALLEL INDUSTRIAL APPLICATIONS: • SWITCHING MODE POWER SUPPLIES • UNINTERRUPTIBLE POWER SUPPLIES • MOTOR CONTROLS • INVERTERS N - channel enhanceme.

Features

BSOLUTE MAXIMUM RATINGS VDS VDGR VGS 10 10 10M Ptot Tstg Tj VISO Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 KO) Gate-source voltage Drain current (cont.) at Tc =25°C Drain current (cont.) at Tc =100°C Drain current (pulsed) Total dissipation at Tc < 25°C Derating factor Storage temperature Max. operating junction temperature Insulation withstand voltage (AC) June 1988 100 100 ±20 150 95 600 400 3.2 -65 to 150 150 2500 V V V A A A W W/oC °C °C V 1/5 427 SGS150MA01001 THERMAL DATA Rthj _case Thermal resistance junction-case Rthc _h Thermal resistance case-heatsink max 0.33.