SGM2310A - SeCoS

SGM2310A N-Channel MOSFET

The SGM2310A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SGM2310A is universally used for all commercial-industrial applications. FEATURES Simple drive requirement Super high density cell design for extremely low RDS(ON) MARKING D 24 A Top View C B KL E 123.

Features

Simple drive requirement Super high density cell design for extremely low RDS(ON) MARKING D 24 A Top View C B KL E 123 D F GH 4 J REF. A B C D E F Millimeter Min. Max. 4.40 4.60 4.05 4.25 2.40 2.60 1.40 1.60 3.00 REF. 0.40 0.52 REF. G H J K L Millimeter Min. Max. -0.89 1.20 0.35 0.41 0.70 0.80 1.50 REF. 2310A = Date code ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction & Storage Temperature THERMAL DATA PARAMETER Therm.