The SGM2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SGM2306A is universally used for all commercialindustrial surface mount applications. Features * Lower On-Resistance * Capable Of 2.5V Gate drive D G S SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4..
* Lower On-Resistance
* Capable Of 2.5V Gate drive
D
G
S
SOT-89
REF.
A B C D E F
Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20
REF.
G H I J K L M
Millimeter
Min. Max. 3.00 REF. 1.50 REF.
0.40 0.52 1.40 1.60 0.35 0.41
5° TYP. 0.70 REF.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @4.5V Continuous Drain Current,3 VGS @4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID@TA=25oC ID@TA=70 oC
IDM PD@TA=25oC
Tj.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SGM2306 |
SeCoS |
N-Channel MOSFET | |
2 | SGM2300 |
Shengbang Microelectronics |
High Voltage Regulators | |
3 | SGM2301 |
SeCoS |
P-Channel MOSFET | |
4 | SGM2305A |
SeCoS |
P-Channel MOSFET | |
5 | SGM2308 |
SeCoS |
N-Channel MOSFET | |
6 | SGM2310 |
SeCoS |
N-Channel MOSFET | |
7 | SGM2310A |
SeCoS |
N-Channel MOSFET | |
8 | SGM2310B |
SeCoS |
N-Channel MOSFET | |
9 | SGM2324 |
Shengbang Microelectronics |
General Purpose CMOS Operational Amplifier | |
10 | SGM2358 |
Shengbang Microelectronics |
General Purpose CMOS Operational Amplifier | |
11 | SGM20 |
Sumitiomo |
compact physical dimensions | |
12 | SGM2005 |
Shengbang Microelectronics |
Linear Regulators |