SG50N06D3S - Sirectifier Semiconductors

SG50N06D3S (SG50N06D2S / SG50N06D3S) Discrete IGBTs

SG50N06D2S, SG50N06D3S Discrete IGBTs Dimensions SOT-227(ISOTOP) Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 .

Features

=15V; TVJ=125oC; RG=10 (RBSOA) Clamped inductive load; L=30uH PC TC=25oC VRRM IFAVM TC=70oC; rectangular; d=50% IFRM tp 10ms; pulse width limited by TJ PD TC=25oC Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s www.DataSheet4U.com TJ TJM Tstg Md Mounting torque Terminal connection torque(M4) Weight CASE DIODE IGBT A Nm/Ib.in. g (TJ=25 C, unless otherwise specified) Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions IC=250uA; VGE=0V IC=250uA; VCE=VGE VCE=0.8VCES; VGE=0V; TJ=25 C TJ=125 C o o Characteristic Values min. typ. max. 600 2.5 5.0 200 1 ±100 2.5 Un.