Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaβstrom Forward current Stoβstrom, τ = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Symbol Symbol Wert Value – 55 ... + 100 100 5 100 2.5 180 450 Einheit Unit °C °C V mA A mW K/W Top; Tstg Tj V.
q Very highly efficient GaAIAs-LED q Good Linearity (Ie = f [IF]) at high currents q DC (with modulation) or pulsed operations are possible q High reliability q High pulse handling capability q Suitable for surface mounting (SMT) q Available on tape and reel q SFH 421 same package as SFH 320/420 SFH 426 same package as SFH 325/425 q SFH 426: Suitable only for IR-reflow soldering. In case of dip soldering, please contact us first. 1997-11-01 Semiconductor Group 1 fpl06867 (R1) 3.8 3.4 SFH 421 SFH 426 Anwendungen q Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb, Lochstreifenla.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SFH420 |
Siemens Semiconductor Group |
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package | |
2 | SFH420 |
OSRAM GmbH |
(SFH420 / SFH425) GaAs Infrared Emitter | |
3 | SFH4200 |
Infineon Technologies |
(SFH4200 / SFH4205) Schnelle GaAs-IR-Lumineszenzdiode | |
4 | SFH4205 |
Infineon Technologies |
(SFH4200 / SFH4205) Schnelle GaAs-IR-Lumineszenzdiode | |
5 | SFH4211 |
OSRAM |
GaAs Infrared Emitter | |
6 | SFH425 |
Siemens Semiconductor Group |
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package | |
7 | SFH425 |
OSRAM GmbH |
(SFH420 / SFH425) GaAs Infrared Emitter | |
8 | SFH4250 |
OSRAM GmbH |
High Power Infrared Emitter | |
9 | SFH4250S |
OSRAM GmbH |
High Power Infrared Emitter | |
10 | SFH4252 |
OSRAM GmbH |
High Power Infrared Emitter | |
11 | SFH4255 |
OSRAM GmbH |
High Power Infrared Emitter | |
12 | SFH4257 |
OSRAM GmbH |
High Power Infrared Emitter |