Beschreibung cathode / Kathode anode / Anode anode / Anode anode / Anode Power TOPLED, cathode marking: bevelled edge, clear resin Power TOPLED, Kathodenkennzeichnung: abgesetzte Ecke, klarer Verguss 2013-12-16 7 Version 1.3 Method of Taping Gurtung SFH 4250S 2013-12-16 8 Version 1.3 Recommended Solder Pad Empfohlenes Lötpaddesign Reflow Soldering / R.
• Double Stack emitter
• High Power Infrared LED
• Short switching times
• 2- fach Stack Emitter
• Infrarot LED mit sehr hoher Ausgangsleistung
• Kurze Schaltzeiten
Besondere Merkmale:
Applications
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Infrared Illumination for cameras IR data transmission Sensor technology Automotive technology
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Anwendungen
Infrarotbeleuchtung für Kameras IR Datenübertragung Sensorik Automobiltechnik
Notes
Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices h.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SFH4250 |
OSRAM GmbH |
High Power Infrared Emitter | |
2 | SFH425 |
Siemens Semiconductor Group |
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package | |
3 | SFH425 |
OSRAM GmbH |
(SFH420 / SFH425) GaAs Infrared Emitter | |
4 | SFH4252 |
OSRAM GmbH |
High Power Infrared Emitter | |
5 | SFH4255 |
OSRAM GmbH |
High Power Infrared Emitter | |
6 | SFH4257 |
OSRAM GmbH |
High Power Infrared Emitter | |
7 | SFH4258 |
OSRAM GmbH |
(SFH4258 / SFH4259) High Power Infrared Emitter | |
8 | SFH4259 |
OSRAM GmbH |
(SFH4258 / SFH4259) High Power Infrared Emitter | |
9 | SFH420 |
Siemens Semiconductor Group |
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package | |
10 | SFH420 |
OSRAM GmbH |
(SFH420 / SFH425) GaAs Infrared Emitter | |
11 | SFH4200 |
Infineon Technologies |
(SFH4200 / SFH4205) Schnelle GaAs-IR-Lumineszenzdiode | |
12 | SFH4205 |
Infineon Technologies |
(SFH4200 / SFH4205) Schnelle GaAs-IR-Lumineszenzdiode |