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SEMIX302GAL12E4S |
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| Part Number | SEMIX302GAL12E4S |
| Manufacturer | Semikron International |
| Description | SEMiX302GAL12E4s SEMiX® 2s Trench IGBT Modules SEMiX302GAL12E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capabi... |
| Features |
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 0,5 RGoff,main = 0,5 RG,X = 2,2 RE,X = 0,5 Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xIC... |
| Document |
 SEMIX302GAL12E4S Data Sheet
PDF 460.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SEMIX302GAL126HD |
Semikron International |
IGBT |
|
| 2 | SEMIX302GAL12T4S |
Semikron International |
IGBT |
|
| 3 | SEMiX302GAL17E4s |
Semikron |
IGBT |
|
| 4 | SEMIX302GAL066HD |
Semikron International |
IGBT |
|
| 5 | SEMIX302GAL066HD |
Semikron International |
IGBT |
|