Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Simple Drive Requirement Small Package Outline Surface Mount Device Features For a single MOSFET VDS = 80V RDS(ON) = 6.8mΩ @ VGS=10 Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Sour.
For a single MOSFET
VDS = 80V
RDS(ON) = 6.8mΩ @ VGS=10
Pin configurations
See Diagram below
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed
Total Power Dissipation @TA=25℃
Operating Junction Temperature Range
Symbol VDS VGS
ID
PD TJ
Rating 80 ±20 100 370 125
-55 to 175
Units V V
A
W ℃
ShangHai Sino-IC Microelectronic Co., Ltd.
1.
SE80100
Electrical Characteristics (TJ=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS (Note 2)
BVDSS IDSS IGSS VGS(th)
RDS(ON)
Dr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SE809 |
Seaward Electronics |
3-Pin Microprocessor Reset Monitor | |
2 | SE8117 |
Seaward |
1A Positive Voltage Regulators | |
3 | SE8117B |
Seaward |
1A Positive Voltage Regulators | |
4 | SE8119 |
Seaward |
500mA Positive Voltage Regulators | |
5 | SE8518 |
Seaward |
Low Dropout LDO | |
6 | SE8525 |
Seaward |
Low Dropout LDO | |
7 | SE8530 |
Seaward |
Low Dropout LDO | |
8 | SE8533 |
Seaward |
Low Dropout LDO | |
9 | SE8536 |
Seaward |
Low Dropout LDO | |
10 | SE8540 |
Seaward |
Low Dropout LDO | |
11 | SE8542 |
Seaward |
Low Dropout LDO | |
12 | SE8550 |
Seaward |
Low Dropout LDO |