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SE80100 |
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| Part Number | SE80100 |
| Manufacturer | Sino-IC |
| Description | Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Simple Drive Requirement Small Package Outline Surface Mount De... |
| Features |
For a single MOSFET
VDS = 80V RDS(ON) = 6.8mΩ @ VGS=10 Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID PD TJ Rating 80 ±20 100 370 125 -55 to 175 Units V V A W ℃ ShangHai Sino-IC Microelectronic Co., Ltd. 1. SE80100 Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS IDSS IGSS VGS(th) RDS(ON) Dr... |
| Document |
 SE80100 Data Sheet
PDF 419.86KB |
| Distributor | Stock | Price | Buy |
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