SDU30N03L - SamHop Microelectronics

SDU30N03L N-Channel MOSFET

www.DataSheet4U.com SDU/D30N03L SamHop Microelectronics Corp. JULY, 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V FEATURES Super high dense cell design for low RDS(ON). ID 30A RDS(ON) (mW ) TYP 11.5 @ VGS = 10V 17 @ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G SDU SERIES TO.

Features

Super high dense cell design for low RDS(ON). ID 30A RDS(ON) (mW ) TYP 11.5 @ VGS = 10V 17 @ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G SDU SERIES TO-252AA(D-PAK) SDD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Symbol DataSheet4U.com VDS VGS @TJ=125 C ID IDM IS PD TJ, TSTG Limit 30 20 30 90 30 50 0.3 -55 to 175 Unit V V A A A W W/ C C DataShee Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 .