SDU30N02 - SamHop Microelectronics

SDU30N02 N-Channel MOSFET

www.DataSheet4U.com S DU/D30N02 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S S uper high dense cell design for low R DS (ON ). ID 25A R DS (ON) ( m W ) Max 20 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S DU S E.

Features

www.DataSheet4U.com S DU/D30N02 E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS b S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 8V, V DS = 0V V DS = V GS , ID = 250uA V GS = 4.5V, ID = 20A Min Typ Max Unit 20 1 100 V uA nA V ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 0.9 1.0 15 30 25 1385 59.