SDP06S60 - Infineon

SDP06S60 Silicon Carbide Schottky Diode

SDP06S60 SDT06S60 Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction up to 1200W 1) • No forward recovery thinQ!¥ SiC Schottky Diode Produc.

Features

epetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature Rev. 2.4 A²s V W °C 2008-06-02 Datasheet pdf - http://www.DataSheet4U.co.kr/ SDP06S60 SDT06S60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded RthJC RthJA Symbol min. - Values typ. max. 2.6 62 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode.