SDP02N20 - SamHop Microelectronics

SDP02N20 N-Channel Enhancement Mode Field Effect Transistor

Green Product SDP02N20 SDF02N20 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 200V ID 2A R DS(ON) ( Ω) Typ 3.0 @ VGS=10V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-220F Package. D G D S G D S G SDP SERIES TO-220 SDF SERIES TO-220F .

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-220F Package. D G D S G D S G SDP SERIES TO-220 SDF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c a SDP02N20 SDF02N20 200 ±30 ±30 TC=25°C TC=100°C 2 1.4 5.9 81 TC=25°C TC=100°C 75 37.5 25 12.5 2 1.4 5.9 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range -55 to 175 .