SDM4435 - SamHop

SDM4435 P-Channel Enhancement Mode MOS FET

S DM4435 P -C hannel E nhancement Mode MOS FE T J ul.27 2004 ver1.1 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) Max -30V -8A 20 @ VGS = -10V 35 @ VGS = -4.5V F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. S urface Mount P ackage. DDDD 8 7 65 5 S O-8 1 1 234 S SS G ABS OLUTE MAXIMUM R ATINGS (TA=25 C unle.

Features

ID =-250uA -30 Zero Gate Voltage Drain Current IDSS VDS =-24V, VGS =0V Gate-Body Leakage ON CHARACTERISTICS b IGSS VGS = 25V, VDS =0V V -1 uA 100 nA Gate Threshold Voltage VGS(th) VDS =VGS, ID = -250uA -1 -1.6 -3 V Drain-S ource On-S tate R esistance R DS(ON) VGS = -10V, ID =-8.0A VGS = -4.5V, ID = -5.0A 15 20 m-ohm 22 35 m-ohm On-S tate Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS c ID(ON) gFS Input Capacitance C IS S Output Capacitance COSS R everse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS c Turn-On Delay Time tD(ON) R ise Time tr Turn-Off.