SDM4952 - SamHop Microelectronics Corp.

SDM4952 Dual P-Channel Enhancement Mode Field Effect Transistor

S DM4952 S amHop Microelectronics C orp. March , 2003 Dual P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) MAX ID -5.3A R DS (ON) S uper high dense cell design for low R DS (ON ). 50 @ V G S = -4.5V 75 @ V G S = -2.7V R ugged and reliable. S urface Mount P ackage. D1 8 D1 7 D2 6 D2 5 S.

Features

S TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 12V, V DS = 0V V DS = V GS , ID = -250uA V GS =-4.5V, ID= -2.9A V GS =-2.7V, ID = -1.5A V DS = -5V, V GS = -4.5V V DS = -15V, ID = - 4.9A Min Typ C Max Unit -20 -1 V uA 100 nA -0.7 V 50 m-ohm 75 m-ohm -20 13 1190 700 250 A S PF PF PF ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductan.