SDG8204 - SamHop Microelectronics Corp.

SDG8204 Dual N-Channel E nhancement Mode F ield E ffect Transistor

S DG 8204 S amHop Microelectronics C orp. December , 2002 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 6A R DS (ON) S uper high dense cell design for low R DS (ON ). 28 @ V G S = 4.0V 34 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. D2 8 S2 7 S2 6 G2 5 T S S.

Features

F CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 20V, V GS = 0V V GS = 8V,V DS = 0V V DS = V GS , ID = 250uA V GS = 4.0V, ID = 6.0A V GS =2.5V, ID = 5.2A V DS = 5V, V GS = 4.5V V DS = 10V, ID = 6.0A Min Typ C Max Unit 20 1 V uA 100 nA 0.7 28 34 20 17 720 320 90 V m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNA.