SDG5521C - SeCoS Halbleitertechnologie

SDG5521C N and P-Ch Enhancement Mode Power MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. DFN2*3 FEATURES Lo.

Features

Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DFN2
*3 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E PACKAGE INFORMATION Package DFN2
*3 MPQ 3K Leader Size 13’ inch Millimeter Min. Max. 3.00 BSC. 1.70 BSC. 0.70 0.90 0.65 BSC. 0.08 0.25 REF. F G H I Millimeter Min. Max. 0.24 0.35 2.00 BSC. 0.20 0.40 0 0.15 Top View ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS.