SDB(S)12 - SDB(S)115 1.0 AMP. Schottky Barrier Bridge Rectifiers DB Features Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260oC/ 10 seconds at te.
Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260oC/ 10 seconds at terminals Mechanical Data Case: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band .047(1.20) .040(1.02) .205(5.2) .195(5.0) DBS .335(8.51) .320(8.13) 450 .013(0.33) .0088(0.22) .404(10.3) .386(9.80) .255(6.5) .245(6.2) .130(3.30) .120(3.05) .060(1.53) .040(1.02) .013(0.3.
SDB(S)12 - SDB(S)115 1.0 AMP. Schottky Barrier Bridge Rectifiers DB Features Metal to silicon rectifier, majority carr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SDBS110 |
Taiwan Semiconductor Company |
(SDB12 - SDB110) Schottky Barrier Rectifiers | |
2 | SDBS110 |
LGE |
Schottky Barrier Bridge Rectifiers | |
3 | SDBS110 |
LGE |
Schottky Barrier Bridge Rectifiers | |
4 | SDBS12 |
Taiwan Semiconductor Company |
(SDB12 - SDB110) Schottky Barrier Rectifiers | |
5 | SDBS12 |
LGE |
Schottky Barrier Bridge Rectifiers | |
6 | SDBS12 |
LGE |
Schottky Barrier Bridge Rectifiers | |
7 | SDBS13 |
Taiwan Semiconductor Company |
(SDB12 - SDB110) Schottky Barrier Rectifiers | |
8 | SDBS13 |
LGE |
Schottky Barrier Bridge Rectifiers | |
9 | SDBS13 |
LGE |
Schottky Barrier Bridge Rectifiers | |
10 | SDBS14 |
Taiwan Semiconductor Company |
(SDB12 - SDB110) Schottky Barrier Rectifiers | |
11 | SDBS14 |
LGE |
Schottky Barrier Bridge Rectifiers | |
12 | SDBS14 |
LGE |
Schottky Barrier Bridge Rectifiers |