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SDBS110 - Taiwan Semiconductor Company

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SDBS110 (SDB12 - SDB110) Schottky Barrier Rectifiers

SDBS12 THRU SDBS110 1.0 AMP. Schottky Barrier Rectifiers Voltage Range 20 to 100 Volts Current 1.0 Ampere Features Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-O Epitaxial construction High temperatu.

Features

Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-O Epitaxial construction High temperature soldering: o 260 C/ 10 seconds at terminals Small size, single installation lead solderable per MIL-STD-202 Method 208 DB DBS .047(1.20) .040(1.02) .205(5.2) .195(5.0) Mechanical Data Case: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band .404(10.3) .386(9.80) .335(8.51) .320(8.13) 45 0 .255(6.5) .245(6.2) .013(0.33) .008.

The same part from a different manufacturer

Datasheet SDBS110 - LGE SDBS110

SDB(S)12 - SDB(S)115 1.0 AMP. Schottky Barrier Bridge Rectifiers DB Features Metal to silicon rectifier, majority carr.

Datasheet SDBS110 - LGE SDBS110

SDB(S)12 - SDB(S)115 1.0 AMP. Schottky Barrier Bridge Rectifiers DB Features Metal to silicon rectifier, majority carr.

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