The SD1897 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz SATCOM applications. A gold metallized emitterballasted die geometry is employed providing high gain and efficiency while ensuring long term reliability and ruggedness under severe operating conditions. SD1897 is packaged in a cost-effective epoxy sealed housing. ABS.
HERMAL DATA DataSheet4U.com RTH(j-c) July 1993 Junction-Case Thermal Resistance 6.0 °C/W 1/4 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com SD1897 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCEO BVEBO hFE DYNAMIC Symbol IC = 3mA IC = 3mA IE = 3mA VCE = 5V IE = 0mA IB = 0mA IC = 0mA IC = 600mA 45 12 3.5 15 — — — — — — — 150 V V V — Test Conditions Value Min. Typ. Max. Unit POUT GP ηc f = 1.65 GHz f = 1.65 GHz f = 1.65 GHz PIN = 0.8 W PIN = 0.8 W PIN = 0.8 W VCE = 28 V VCE = 28 V VCE = 28 V 10 11 48 — .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SD1891-03 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS | |
2 | SD1894 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS | |
3 | SD1895-03 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS | |
4 | SD1898 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS | |
5 | SD1899 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS | |
6 | SD18 |
KD |
STANDARD CAPACITANCE TVS ARRAY / ESD ARRAY | |
7 | SD18-100 |
Cooper Electronic |
Shielded Inductors | |
8 | SD18-100 |
Cooper Electronic Technologies |
(SD Series) High Power Density / Low Profile / Shielded Inductors | |
9 | SD18-100-R |
Eaton |
Low profile metalized shielded drum core power inductors | |
10 | SD18-101 |
Cooper Electronic |
Shielded Inductors | |
11 | SD18-101-R |
Eaton |
Low profile metalized shielded drum core power inductors | |
12 | SD18-102 |
Cooper Electronic |
Shielded Inductors |