The SD1895-03 is a 28 V silicon NPN planar transistor designed for INMARSAT and other 1.6 GHz SATCOM applications. This device utilizes polysilicon site ballasting with a gold metallized die to achieve high reliability and ruggedness. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base VCBO VCEO VEBO IC P.
993 Junction-Case Thermal Resistance 4.7 °C/W 1/4 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com SD1895-03 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCEO BVEBO hFE IC = 5 mA IC = 5 mA IE = 5 mA VCE = 5 V IE = 0 mA IB = 0 mA IC = 0 mA IC = 1 A 45 12 3.0 15 — — — — — — — 150 V V V — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP ηc f = 1.65 GHz f = 1.65 GHz f = 1.65 GHz PIN = 2.4 W PIN = 2.4 W PIN = 2.4 W VCE = 28 V VCE = 28 V VCE = 28 V 20 9.2 48 — — — — — — W dB % et4U.com TYPICAL.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SD1891-03 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS | |
2 | SD1894 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS | |
3 | SD1897 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS | |
4 | SD1898 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS | |
5 | SD1899 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS | |
6 | SD18 |
KD |
STANDARD CAPACITANCE TVS ARRAY / ESD ARRAY | |
7 | SD18-100 |
Cooper Electronic |
Shielded Inductors | |
8 | SD18-100 |
Cooper Electronic Technologies |
(SD Series) High Power Density / Low Profile / Shielded Inductors | |
9 | SD18-100-R |
Eaton |
Low profile metalized shielded drum core power inductors | |
10 | SD18-101 |
Cooper Electronic |
Shielded Inductors | |
11 | SD18-101-R |
Eaton |
Low profile metalized shielded drum core power inductors | |
12 | SD18-102 |
Cooper Electronic |
Shielded Inductors |