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The SD1731 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Valu e Un it 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Co.
AL SPECIFICATIONS STATIC (Tcase = 25°C)
Symbo l T est Co nditions Value Min . T yp. Max. Unit
BVCBO BVCEO BVEBO ICEO ICES hFE
IC = 200 mA IC = 200 mA IE = 20 mA VCE = 30 V VCE = 55 V VCE = 6 V
IE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IE = 0 mA IC = 10 A
110 55 4.0 — — 15
— — — — — —
— — — 5 10 80
V V V mA mA —
DYNAMIC (Theatsink = 25°C)
Symbo l Test Cond ition s Valu e Min. T yp. Max. Un it
POUT GP
* IMD
* ηc
* COB
f = 30 MHz POUT = 220 W PEP POUT = 220 W PEP POUT = 220 W PEP f = 1 MHz
VCE = 50 V VCE = 50 V VCE = 50 V VCE = 50 V VCB = 50 V
ICQ = 150 mA ICQ = 150 mA ICQ = 150 mA ICQ = .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SD1730 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|
| 2 | SD1731-14 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|
| 3 | SD1732 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS |
|
| 4 | SD1733 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|
| 5 | SD1700C |
International Rectifier |
STANDARD RECOVERY DIODES Hockey Puk Version |
|
| 6 | SD1700C24K |
Vishay |
Standard Recovery Diodes |
|
| 7 | SD1700C30K |
Vishay |
Standard Recovery Diodes |
|
| 8 | SD1700C36K |
Vishay |
Standard Recovery Diodes |
|
| 9 | SD1700C40K |
Vishay |
Standard Recovery Diodes |
|
| 10 | SD1700C45K |
Vishay |
Standard Recovery Diodes |
|
| 11 | SD1726 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|
| 12 | SD1727 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|