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The SD1730 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. The devices utlizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Volt.
ol Test Conditions Value Min. Typ. Max. Unit
BVCES BVCEO BVEBO I CEO ICES hFE DYNAMIC
Symbol
I C = 100 mA I C = 200 mA I E = 20 mA VCE = 30 V VCE = 35 V VCE = 5 V
VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IE = 0 mA IC = 7 A
70 35 4.0 — — 15
— — — — — —
— — — 5 5 60
V V V mA mA —
Test Conditions
Value Min . Typ. Max.
Unit
POUT PG
* IMD
* η c
* COB
f = 30 MHz POUT = 220 W PEP POUT = 220 W PEP POUT = 220 W PEP f = 1 MHz
VCE = 28 V VCE = 28 V VCE = 28 V VCE = 28 V VCB = 28 V VCE = 28 V
ICQ = 750 mA ICQ = 750 mA ICQ = 750 mA ICQ = 750 mA ICQ = 750 mA
220 12 — 40 — —
— — — — 450 ∞:1
— — .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SD1731 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|
| 2 | SD1731-14 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|
| 3 | SD1732 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS |
|
| 4 | SD1733 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|
| 5 | SD1700C |
International Rectifier |
STANDARD RECOVERY DIODES Hockey Puk Version |
|
| 6 | SD1700C24K |
Vishay |
Standard Recovery Diodes |
|
| 7 | SD1700C30K |
Vishay |
Standard Recovery Diodes |
|
| 8 | SD1700C36K |
Vishay |
Standard Recovery Diodes |
|
| 9 | SD1700C40K |
Vishay |
Standard Recovery Diodes |
|
| 10 | SD1700C45K |
Vishay |
Standard Recovery Diodes |
|
| 11 | SD1726 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|
| 12 | SD1727 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|