SD1407 - ST Microelectronics

SD1407 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

The SD1407 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state-of-the-art diffused emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ T STG.

Features

s Value Min. Typ. Max. Unit BVCBO BVCES BVCEO BVEBO ICES hFE IC = 100mA IC = 100mA IC = 100mA IE = 10mA VCE = 30V VCE = 5V IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0mA IC = 5A 65 65 35 4.0 — 10 — — — — — — — — — — 15 200 V V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP IMD
* COB Note:
*P OUT f = 30 MHz f = 30 MHz f = 30 MHz f = 1 MHz = 100W PE P, fO PIN = 3.95 W PIN = 3.95 W VCE = 28 V VCB = 30 V = 30 + 30.001 MHz VCE = 28 V VCE = 28 V ICQ = 100 mA 125 15 — — — 16 −34 250 — — −30 — W dB dB pF TYPICAL PERFORMANCE SAFE OPERATING AREA 2/4 SD1407 TES.