SD1405 - ST Microelectronics

SD1405 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

The SD1405 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes diffused emitter resistors to achieve infinte VSWR under rated operating conditions. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS .

Features

onditions Value Min. Typ. Max. Unit BVCBO BVCES BVCEO BVEBO ICES hFE IC = 50 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 15 V VCE = 5 V IE = 0 mA VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 5 A 36 36 18 4.0 — 20 — — — — — — — — — — 15 300 V V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP IMD
* COB Note:
*P OUT f = 30 MHz f = 30 MHz f = 30 MHz f = 1 MHz = 60WP EP, fO PIN = 3.8 W PIN = 3.8 W VCE = 12.5 V VCB = 12 V = 30 + 30.001 MHz VCE = 12.5 V VCE = 12.5 V ICQ = 100 mA 75 13 −32 — — — — 350 — — — — W dB dB pF TYPICAL PERFORMANCE POWER OUTPUT vs POWE.