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The SD1224 is an epitaxial silicon NPN planar transistor designed primarily for 28 V FM Class C RF amplifiers utilized in ground station transmitters. This device utilizes ballasted emitter resistors and improved metallization systems to achieve optimum load mismatch capability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO VCEO.
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• 28 VOLTS
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175 MHz CLASS C COMMON EMITTER EFFICIENCY 60% MIN. POUT = 40 W MIN. GP = 7.6 dB GAIN
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DESCRIPTION:
The SD1224 is an epitaxial silicon NPN planar transistor designed primarily for 28 V FM Class C RF amplifiers utilized in ground station transmitters. This device utilizes ballasted emitter resistors and improved metallization systems to achieve optimum load mismatch capability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCBO VCEO VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage D.
SD1224 - Microsemi Corporation
KEY FEATURES W W W . Microsemi . COM The SD1224 is an epitaxial silicon NPN planar transistor designed primarily for .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SD1220-1 |
Thomson CSF |
VHF Communications Transistors |
|
| 2 | SD1222-5 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 3 | SD1224-10 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|
| 4 | SD1224-10 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|
| 5 | SD1224-2 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|
| 6 | SD12 |
Diodes |
1 CHANNEL UNIDIRECTIONAL TVS |
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| 7 | SD12 |
SEMTECH |
Single Line TVS Diode |
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| 8 | SD12 |
Leiditech |
500W Unidirectional TVS Diode |
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| 9 | SD12 |
SeCoS |
Plasetic Encapsulate ESD Protection Diodes |
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| 10 | SD12 |
KD |
STANDARD CAPACITANCE TVS ARRAY / ESD ARRAY |
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| 11 | SD12-100 |
Cooper Electronic |
Shielded Inductors |
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| 12 | SD12-100-R |
Eaton |
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|