The ASI SD1222-5 is a transistor designed primarily for 12.5 V AM Class-C amplifiers in the118-136 MHz band and 28 V Class-C RF amplifiers in ground stations. PACKAGE STYLE .380 4L FLG B .112 x 45° FEATURES: • PG = 8.2 dB min. at 5 W/30 MHz • IMD3 = -30 dBc max. at 20 W (PEP) • Omnigold™ Metalization System • Emitter Ballasting E B F MAXIMUM RATINGS IC.
• PG = 8.2 dB min. at 5 W/30 MHz
• IMD3 = -30 dBc max. at 20 W (PEP)
• Omnigold™ Metalization System
• Emitter Ballasting
E B
F
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θJC 3.0 A 65 V 35 V 4.0 V 30 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 5.83 °C/W
DIM
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICBO ICES hFE Cob GP
TC = 25 °C
IC = 200 mA IE = 10 mA VCB = 30 V VCE = 30 V VCE = 5.0 V VCB = 30 V VCC = 27 V
IC = 200 mA
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w
NONETEST CONDITIONS
w
.D
t a
S a
e h
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A B C D E F G H I J
U 4
D MINIMUM
inches / mm
.c
E
C E
C
m o
A J .125 G H I MAXIMUM
inches / mm
Ø..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SD1220-1 |
Thomson CSF |
VHF Communications Transistors | |
2 | SD1224 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS | |
3 | SD1224 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS | |
4 | SD1224-10 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS | |
5 | SD1224-10 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS | |
6 | SD1224-2 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS | |
7 | SD12 |
Diodes |
1 CHANNEL UNIDIRECTIONAL TVS | |
8 | SD12 |
SEMTECH |
Single Line TVS Diode | |
9 | SD12 |
Leiditech |
500W Unidirectional TVS Diode | |
10 | SD12 |
SeCoS |
Plasetic Encapsulate ESD Protection Diodes | |
11 | SD12 |
KD |
STANDARD CAPACITANCE TVS ARRAY / ESD ARRAY | |
12 | SD12-100 |
Cooper Electronic |
Shielded Inductors |